Author

Date of Award

2015

Publisher

North Dakota State University

Document Type

Thesis

Degree Awarded

Master of Science (MS)

Program

Industrial Engineering and Management

Department

Industrial and Manufacturing Engineering

College

Engineering

Faculty Advisor

Yadav, Om Prakash

Description

A reliability prediction method is proposed to determine the lifetime of IGBTs (Insulated Gate Bipolar Transistors) under power cycling test based on the performance of solder joint and wire bond. The failure characteristics of solder joint and wire bond are captured via selected PoF model respectively. To provide precise reliability prediction, PoF models are converted into probabilistic models. In addition, the failure interaction between wire bond and solder joint is studied. Wire bond lift-off is treated as the predominant failure mode based upon experiments from literature and solder joint degradation process is triggered by wire bond degradation process. Increased junction temperature is captured as it is affected by the degradation process of both components. In the end, the system reliability is computed in a series system configuration.

Rights

NDSU Policy 190.6.2

Rights Link

https://www.ndsu.edu/fileadmin/policy/190.pdf

Handle Identifier

https://hdl.handle.net/10365/27615

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